The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Jul. 03, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Ming-Tse Lin, Hsinchu, TW;

Chu-Fu Lin, Kaohsiung, TW;

Chien-Li Kuo, Hsinchu, TW;

Yung-Chang Lin, Taichung, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 21/283 (2006.01); H01L 21/302 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/283 (2013.01); H01L 21/302 (2013.01); H01L 21/7685 (2013.01); H01L 21/76865 (2013.01); H01L 21/76871 (2013.01); H01L 21/76883 (2013.01); H01L 23/481 (2013.01); H01L 23/49827 (2013.01); H01L 23/5226 (2013.01); H01L 24/03 (2013.01); H01L 24/16 (2013.01); H01L 28/60 (2013.01); H01L 2224/02317 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/4824 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present invention provides a method of forming a chip with TSV electrode. A substrate with a first surface and a second surface is provided. A thinning process is performed from a side of the second surface so the second surface becomes a third surface. Next, a penetration via which penetrates through the first surface and the third surface is formed in the substrate. A patterned material layer is formed on the substrate, wherein the patterned material layer has an opening exposes the penetration via. A conductive layer is formed on the third surface thereby simultaneously forming a TSV electrode in the penetration via and a surface conductive layer in the opening.


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