The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Dec. 02, 2011
Yung-chang Lin, Taichung, TW;
Chien-li Kuo, Hsinchu, TW;
Ming-tse Lin, Hsinchu, TW;
Sun-chieh Chien, Hsinchu, TW;
Yung-Chang Lin, Taichung, TW;
Chien-Li Kuo, Hsinchu, TW;
Ming-Tse Lin, Hsinchu, TW;
Sun-Chieh Chien, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device includes the following steps. A semiconductor substrate having a first side and a second side facing to the first side is provided. At least an opening is disposed in the semiconductor substrate of a protection region defined in the first side. A first material layer is formed on the first side and the second side, and the first material layer partially fills the opening. Subsequently, a part of the first material layer on the first side and outside the protection region is removed. A second material layer is formed on the first side and the second side, and the second material layer fills the opening. Then, a part of the second material layer on the first side and outside the protection region is removed. Finally, the remaining first material layer and the remaining second material layer on the first side are planarized.