Yuming Bai

Title: Yuming Bai: Innovator in Dual Gate Device Technology

Introduction

Yuming Bai is a prominent inventor based in Union City, California, known for his significant contributions to the field of semiconductor technology. With a total of 13 patents to his name, he has made remarkable advancements in the fabrication of dual gate devices.

Latest Patents

One of Yuming Bai's latest patents focuses on the structures and methods of fabricating dual gate devices. In this innovative process, the first polysilicon (poly-1) is deposited into deep trenches formed in a substrate. A first polysilicon polishing process is then performed to planarize the exposed surfaces of the poly-1, ensuring that the surfaces are flush with adjacent surfaces. Following this, shallow trenches are created in the substrate between the deep trenches, and a second polysilicon (poly-2) is deposited into these shallow trenches. A second polysilicon polishing process is conducted to planarize the exposed surface of the poly-2, making it flush with adjacent surfaces. Finally, metal contacts to both the poly-1 and poly-2 are formed, completing the dual gate device structure.

Career Highlights

Throughout his career, Yuming Bai has worked with notable companies such as Vishay Siliconix and Siliconix Incorporated. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Yuming Bai has collaborated with several talented individuals in his field, including Deva N Pattanayak and Kyle Terrill. These collaborations have further enhanced his work and contributions to the industry.

Conclusion

Yuming Bai's innovative work in dual gate device technology and his extensive patent portfolio highlight his significant impact on the semiconductor industry. His contributions continue to shape advancements in this critical field.