The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
May. 13, 2004
Deva Pattanayak, Cupertino, CA (US);
Jason (Jianhai) Qi, San Jose, CA (US);
Yuming Bai, Hayward, CA (US);
Kam-hong Lui, Santa Clara, CA (US);
Ronald Wong, Millbrae, CA (US);
Deva Pattanayak, Cupertino, CA (US);
Jason (Jianhai) Qi, San Jose, CA (US);
Yuming Bai, Hayward, CA (US);
Kam-Hong Lui, Santa Clara, CA (US);
Ronald Wong, Millbrae, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.