The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Dec. 27, 2012
Vishay-siliconix, Santa Clara, CA (US);
Deva N. Pattanayak, Saratoga, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Sharon Shi, San Jose, CA (US);
Misha Lee, San Jose, CA (US);
Yuming Bai, Union City, CA (US);
Kam Lui, Santa Clara, CA (US);
Kuo-in Chen, Los Altos, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.