The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Mar. 18, 2008
Deva Pattanayak, Cupertino, CA (US);
Jason (Jianhai) Qi, San Jose, CA (US);
Yuming Bai, Hayward, CA (US);
Kam-hong Lui, Santa Clara, CA (US);
Ronald Wong, Millbrae, CA (US);
Deva Pattanayak, Cupertino, CA (US);
Jason (Jianhai) Qi, San Jose, CA (US);
Yuming Bai, Hayward, CA (US);
Kam-Hong Lui, Santa Clara, CA (US);
Ronald Wong, Millbrae, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.