Kanagawa, Japan

Yukie Nishikawa

This inventor holds 49 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation. Active years: 1990-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yukie Nishikawa. Retrieved from https://idiyas.com/inventor/yukie-nishikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 49 

% Patents Active = 77.6

Average Co-Inventor Count = 3.6

ph-index = 14

Forward Citations = 1,278(Granted Patents)


Location History:

  • Chiba, JP (1994)
  • Chiba-ken, JP (1996)
  • Minato-ku, JP (2006)
  • Kanagawa-ken, JP (2004 - 2009)
  • Kitakyushu, JP (2009 - 2010)
  • Kawasaki, JP (2006 - 2011)
  • Kitakyusyu, JP (2011)
  • Narashino, JP (1990 - 2013)
  • Ishikawa-ken, JP (2014 - 2015)
  • Fukuoka-ken, JP (2013 - 2018)
  • Ishikawa, JP (2015 - 2021)
  • Nonoichi Ishikawa, JP (2017 - 2024)

Company Filing History:


Years Active: 1990-2025

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Areas of Expertise:
Semiconductor Device
Light Emitting Element
Nonvolatile Memory
Field Effect Transistor
Optoelectric Device
Manufacturing Method
Heterojunction Interface
MIS Transistors
Compound Semiconductor
Cladding Layer
49 patents (USPTO):Explore Patents

Title: Yukie Nishikawa: A Pioneer in Semiconductor Innovations

Introduction

Yukie Nishikawa, based in Kanagawa-ken, Japan, is a prominent inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 49 patents to his name, he has played a vital role in advancing semiconductor devices and their manufacturing methods.

Latest Patents

Nishikawa's latest innovations include a groundbreaking semiconductor device and manufacturing method. One of his notable patents describes a semiconductor device that comprises a silicon substrate, a first layer made of an oxide film, a second layer featuring selectively designed projecting and recessed parts, a barrier metal, and a gate pad which is in close contact with the silicon substrate via the barrier. This intricate design aims to enhance the performance and efficiency of semiconductor devices. Another patent highlights a semiconductor device that incorporates a semiconductor layer, various electrodes, and an innovative resin layer that partially covers the second surface of the layer, showcasing openings with rounded corners. Additionally, a sensor element is included above the second surface, further exemplifying his inventive contributions.

Career Highlights

Throughout his career, Yukie Nishikawa has worked at renowned companies such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His roles at these firms have allowed him to cultivate a wealth of knowledge and experience, further driving his ability to innovate in semiconductor technology.

Collaborations

Nishikawa has collaborated with several talented professionals in the industry, including Masayuki Ishikawa and Genichi Hatakoshi. These partnerships not only highlight his commitment to teamwork but also reflect the collective effort in pushing the boundaries of semiconductor advancements.

Conclusion

Yukie Nishikawa's contributions to the semiconductor field through his numerous patents and collaborations underscore his status as a leading inventor. His work continues to influence the industry, paving the way for future innovations and improvements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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