Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Yukie Nishikawa

Masayuki Ishikawa

Genichi Hatakoshi

Koichi Nitta

Shinji Saito

Yoshihiro Kokubun

Hironori Yamasaki

Hideto Sugawara

Masaaki Onomura

Peter James Parbrook

Kazuhiko Itaya

Koichi Muraoka

John Rennie

Masaki Okajima

Katsuyoshi Furuki

Tatsuo Shimizu

Takeshi Yamaguchi

Naoki Yasuda

Hidetoshi Fujimoto

Masahiro Yamamoto

Hideki Satake

Kotaro Zaima

Yasuhiko Akaike

Noburu Fukushima

Takashi Kataoka

Minoru Watanabe

Mariko Suzuki

Akira Takashima

Daisuke Matsushita

Yuichiro Mitani

Kenya Kobayashi

Hirotaka Nishino

Shoko Kikuchi

Shigeya Naritsuka

Yasuhiko Tsuburai

Nobuhiro Takahashi

Emiko Adachi

Minoru Amano

Yasuo Ohba

Hiroaki Yoshida

Masayuki Sugiura

Yukio Watanabe

Shinji Nunotani

Takao Noda

Motoya Kishida

Hajime Okuda

Hideo Shiozawa

Hironobu Shibata

Atsushi Kamata

Yasuo Ashizawa

Chiharu Nozaki

Kazunari Yabe

Hisashi Mori

Masaki Okazaki

Kazuki Minamikawa

Aki Sasaki

Emiko Inoue

A semiconductor device includes a silicon substrate, a first layer, a second layer, a barrier metal, and a gate pad. The first layer is formed of an oxide film provided on an upper surface of the silicon substrate. The second layer is a layer at least selectively having a projecting and recessed part on an upper surface of the first layer, the projecting and recessed part having a projection and recess deeper than a projection and recess occurring when the layer is formed in a planar shape. The barrier metal is formed on an upper surface of the second layer according to a shape of the projecting and recessed part. The gate pad is in close contact with the silicon substrate via the barrier metal.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device includes a semiconductor layer, a first electrode on a first surface of the semiconductor layer, a plurality of second electrodes on a second surface of the semiconductor layer, a control electrode between the first electrode and each of the plurality of second electrodes and electrically insulated from the semiconductor layer and each of the plurality of second electrodes, and a resin layer partially covering the second surface of the semiconductor layer and having a plurality of openings through which the respective second electrodes are at least partially exposed. Each of the plurality of openings has rounded corners. The device further includes a sensor element above the second surface of the semiconductor layer and covered by a first part of the resin layer surrounded by the openings.

Semiconductor device

A semiconductor device includes a semiconductor layer having a first surface in which a plurality of trenches each extending along a first direction are arranged along a second direction perpendicular to the first direction, a first electrode on a second surface of the semiconductor layer, a second electrode on the first surface of the semiconductor layer, and a control electrode inside at least one of the trenches. The plurality of trenches includes first, second, and third trenches. The first and second trenches are connected to each other via a first connector at an end in the first direction of each of the first and second trenches. The third trench extends beyond the end of each of the first and second trenches along the first direction.

A semiconductor device includes a semiconductor layer on a first electrode. The semiconductor layer includes a first region of a first type, a second region of a second type, a third region of the second type, and a fourth region of the first type. The second region is above the first region. The third region surrounds the second region. The fourth region surrounds the third region. The second electrode includes a first portion above the second region and a second portion surrounding the first portion. The third electrode surrounds the second electrode and is electrically connected to the fourth region. The semi-insulating layer is electrically connected to the second electrode and the third electrode. A first end portion of the first insulating layer is above the third region.

Semiconductor device including a semi-insulating layer contacting a first region at a first surface of a semiconductor layer

According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.

Semiconductor light emitting element

A semiconductor device according to an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first conductive layer provided on the first insulating film, a second insulating film provided on the semiconductor layer and the first conductive layer, a second conductive layer provided on the second insulating film, a first contact portion connecting the semiconductor layer and the second conductive layer, and a second contact portion connecting the first conductive layer and the second conductive layer. A distance between the semiconductor layer and an upper portion of the second insulating film adjacent to the second contact portion is greater than a distance between the semiconductor layer and an upper portion of the second insulating film adjacent to the first contact portion. The second contact portion has a larger width than the first contact portion.

A semiconductor package in an embodiment includes a semiconductor device which has a first semiconductor element, a second semiconductor element, and a common first electrode between the first and second semiconductor elements. A second electrode is electrically connected to the first semiconductor element. A third electrode extends through the second semiconductor element and electrically connects to the first electrode. A fourth electrode is electrically connected to the second semiconductor element. A first terminal of the package is electrically connected to the third electrode. A second terminal of the package is electrically connected to the second electrode and the fourth electrode. An insulating material surrounds the semiconductor device.

Semiconductor device and semiconductor package

A semiconductor device includes a plurality of gate electrodes. Each gate electrode includes a first portion extending from a first end to a second end and a second portion extending parallel the first portion from a first end to a second end. The first and second portions are spaced from each other. A third portion of at least one gate electrode connects the first end of the first portion to the first end of the second portion of the gate electrode. A first insulating film is on the plurality of gate electrodes. A first interconnect portion is disposed on the first or second portion the gate electrode to electrically connecting the gate electrode to a gate pad. A second interconnect portion is disposed on semiconductor regions between the gate electrodes and electrically connects the semiconductor regions to an emitter pad.

A semiconductor device includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, a first electrode, a third semiconductor region of the second conductive type, a fourth semiconductor region of the first conductive type, and a conductive portion. The second semiconductor region is provided on the first semiconductor region. The first electrode is provided on the second semiconductor region. The third semiconductor region is provided on the first electrode. The fourth semiconductor region is provided on the third semiconductor region. The conductive portion is surrounded by the third semiconductor region and an intervening insulation portion and is electrically connected to the first electrode.

According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a dielectric film and an electrode. The first semiconductor layer is capable of emitting light. The second semiconductor layer has a first major surface in contact with the first semiconductor layer and a second major surface opposite to the first major surface, the second major surface including a first region having convex structures and a second region not having the convex structures. The dielectric film is provided at least at a tip portion of the convex structures, and the electrode is provided above the second region.

Semiconductor light emitting device

The semiconductor device includes a first semiconductor layer of the first conductive type, a second semiconductor layer having the cubic crystalline structure formed on the first semiconductor layer, an electrode formed on the second semiconductor layer, and a reactive region formed between the second semiconductor layer and the electrode. The second semiconductor layer includes an upper surface that is tilted from the (100) plane. The reactive region includes at least one element constituting the second semiconductor layer, at least one element constituting the electrode, and forming a protuberance extending toward the second semiconductor layer.

Semiconductor devices

According to one embodiment, in a method of a semiconductor device, a trench is formed in the direction of a lower surface from an upper surface of a semiconductor layer. A first insulating film is formed to cover an inner surface of the trench. An electrode material is formed to fill the trench and cover the upper surface of the semiconductor layer. The electrode material is selectively removed except a portion of the electrode material to fill the trench and a portion of the electrode material to cover an opening of the trench. The first insulating film to cover an upper portion of the trench is removed. The portions of the electrode material to fill the trench and cover the opening of the trench are etched back to form a first electrode at a lower portion of the trench.

Method of manufacturing semiconductor device having field plate electrode

According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures.

According to one embodiment, a light emitting element includes a light emitting layer, a cladding layer, a current spreading layer, a second layer, and an electrode. The light emitting layer is capable of emitting emission light. The current spreading layer includes a surface processed layer and a first layer. The surface processed layer has a surface including convex portions and bottom portions provided adjacent to the convex portions. The first layer is provided between the surface processed layer and the cladding layer. The second layer is provided between the surface processed layer and the cladding layer and includes a region having an impurity concentration higher than an impurity concentration of the current spreading layer. The electrode is provided in a region of the surface of the surface processed layer where the convex portions and the bottom portions are not provided.

Light emitting element

Growing community of inventors

Kanagawa-ken, Japan

Yukie Nishikawa