The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Sep. 10, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Nobuhiro Takahashi, Ishikawa-ken, JP;
Yukie Nishikawa, Ishikawa-ken, JP;
Yasuhiko Akaike, Ishikawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, in a method of a semiconductor device, a trench is formed in the direction of a lower surface from an upper surface of a semiconductor layer. A first insulating film is formed to cover an inner surface of the trench. An electrode material is formed to fill the trench and cover the upper surface of the semiconductor layer. The electrode material is selectively removed except a portion of the electrode material to fill the trench and a portion of the electrode material to cover an opening of the trench. The first insulating film to cover an upper portion of the trench is removed. The portions of the electrode material to fill the trench and cover the opening of the trench are etched back to form a first electrode at a lower portion of the trench.