The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Mar. 11, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Emiko Inoue, Nonoichi Ishikawa, JP;
Yukie Nishikawa, Nonoichi Ishikawa, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-Ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a silicon substrate, a first layer, a second layer, a barrier metal, and a gate pad. The first layer is formed of an oxide film provided on an upper surface of the silicon substrate. The second layer is a layer at least selectively having a projecting and recessed part on an upper surface of the first layer, the projecting and recessed part having a projection and recess deeper than a projection and recess occurring when the layer is formed in a planar shape. The barrier metal is formed on an upper surface of the second layer according to a shape of the projecting and recessed part. The gate pad is in close contact with the silicon substrate via the barrier metal.