Company Filing History:
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1 out of 1,514 Years Active: 2025
Title: Emiko Inoue: Innovator in Semiconductor Technology
Introduction
Emiko Inoue is a notable inventor based in Nonoichi, Ishikawa, Japan. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent.
Latest Patents
Emiko Inoue holds a patent for a semiconductor device and its manufacturing method. This semiconductor device includes a silicon substrate, a first layer formed of an oxide film on the upper surface of the silicon substrate, and a second layer that features a projecting and recessed part. The design of the second layer allows for deeper projections and recesses compared to a planar shape. Additionally, a barrier metal is formed on the upper surface of the second layer, and a gate pad is in close contact with the silicon substrate via the barrier metal.
Career Highlights
Throughout her career, Emiko has worked with prominent companies in the technology sector, including Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. Her experience in these organizations has contributed to her expertise in semiconductor devices.
Collaborations
Emiko has collaborated with Yukie Nishikawa, who is also a talented professional in the field. Their partnership has likely fostered innovation and development in their projects.
Conclusion
Emiko Inoue's work in semiconductor technology exemplifies her innovative spirit and dedication to advancing the field. Her patent and career achievements highlight her significant contributions to the industry.