The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2018
Filed:
Sep. 15, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Yukie Nishikawa, Nonoichi Ishikawa, JP;
Motoya Kishida, Kanazawa Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device according to an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first conductive layer provided on the first insulating film, a second insulating film provided on the semiconductor layer and the first conductive layer, a second conductive layer provided on the second insulating film, a first contact portion connecting the semiconductor layer and the second conductive layer, and a second contact portion connecting the first conductive layer and the second conductive layer. A distance between the semiconductor layer and an upper portion of the second insulating film adjacent to the second contact portion is greater than a distance between the semiconductor layer and an upper portion of the second insulating film adjacent to the first contact portion. The second contact portion has a larger width than the first contact portion.