The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Aug. 31, 2015
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Yasuhiko Akaike, Kanazawa Ishikawa, JP;

Kenya Kobayashi, Nonoichi Ishikawa, JP;

Yukie Nishikawa, Nonoichi Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 25/072 (2013.01); H01L 29/7393 (2013.01); H01L 29/861 (2013.01);
Abstract

A semiconductor device includes a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, a first electrode, a third semiconductor region of the second conductive type, a fourth semiconductor region of the first conductive type, and a conductive portion. The second semiconductor region is provided on the first semiconductor region. The first electrode is provided on the second semiconductor region. The third semiconductor region is provided on the first electrode. The fourth semiconductor region is provided on the third semiconductor region. The conductive portion is surrounded by the third semiconductor region and an intervening insulation portion and is electrically connected to the first electrode.


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