This inventor holds 11 USPTO granted patents. Top assignee: Industrial Technology Research Institute. Active years: 2007-2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Hsinchu, TW (2007 - 2010)
- Taipei County, TW (2008 - 2011)
Company Filing History:
Years Active: 2007-2011
Title: Innovations of Yuan-Jen Lee in Magnetic Random Access Memory
Introduction
Yuan-Jen Lee is a prominent inventor based in Taipei County, Taiwan. He has made significant contributions to the field of magnetic random access memory (MRAM), holding a total of 11 patents. His work focuses on enhancing memory technology, which is crucial for modern computing.
Latest Patents
Yuan-Jen Lee's latest patents include innovative methods and designs for MRAM. One of his notable inventions is a magnetic random access memory that features multiple memory cells arranged in an array. Each memory cell consists of a magnetic free stack layer and a pinned stack layer, with the magnetization of the pinned stack layer set in a predetermined direction. Additionally, he has developed a method for switching magnetic moments in MRAM devices using low current, which involves a sequence of magnetic fields to write memory cells effectively. Another method he created allows for reading MRAM devices by partially switching magnetic moments in a reference memory cell to generate a reference current.
Career Highlights
Yuan-Jen Lee is affiliated with the Industrial Technology Research Institute, where he continues to advance research in memory technologies. His work has been instrumental in pushing the boundaries of what is possible in MRAM, making it a viable option for future computing needs.
Collaborations
Yuan-Jen Lee collaborates with esteemed colleagues, including Chien-Chung Hung and Ming-Jer Kao. Their combined expertise contributes to the innovative developments in the field of memory technology.
Conclusion
Yuan-Jen Lee's contributions to magnetic random access memory exemplify the importance of innovation in technology. His patents and research efforts are paving the way for advancements in memory systems that will benefit future generations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
