The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2007
Filed:
Jun. 23, 2005
Yuan-jen Lee, Hsinchu, TW;
Yung-hsiang Chen, Hsinchu, TW;
Wei-chuan Chen, Hsinchu, JP;
Ming-jer Kao, Hsinchu, TW;
Lien-chang Wang, Hsinchu, TW;
Yuan-Jen Lee, Hsinchu, TW;
Yung-Hsiang Chen, Hsinchu, TW;
Wei-Chuan Chen, Hsinchu, JP;
Ming-Jer Kao, Hsinchu, TW;
Lien-Chang Wang, Hsinchu, TW;
Industrial Technology Research Institute, Chu-Tung, Hsinchu, TW;
Abstract
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.