Location History:
- Taipei County, TW (2008)
- Hsinchu, TW (2007 - 2010)
Company Filing History:
Years Active: 2007-2010
Title: Lien-Chang Wang: Innovator in Magnetoresistive Random Access Memory
Introduction
Lien-Chang Wang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of magnetoresistive random access memory (MRAM). With a total of 4 patents to his name, Wang's work has advanced the technology used in memory devices.
Latest Patents
Wang's latest patents focus on methods for switching magnetic moments in MRAM devices. One notable patent describes a method for writing a memory cell in an MRAM device. This method involves sequentially providing a first magnetic field in a first direction, followed by a second magnetic field in a direction substantially perpendicular to the first. The process includes turning off the first magnetic field, providing a third magnetic field in the opposite direction, and subsequently turning off all magnetic fields. Another patent outlines a method for reading an MRAM device, which includes partially switching magnetic moments in a reference memory cell to generate a reference current. This method also involves measuring a read current through the memory cell and comparing it with the reference current.
Career Highlights
Wang is currently employed at the Industrial Technology Research Institute, where he continues to innovate in the field of memory technology. His work has been instrumental in enhancing the efficiency and performance of MRAM devices.
Collaborations
Wang has collaborated with notable colleagues, including Chien-Chung Hung and Ming-Jer Kao. Their combined expertise has contributed to the advancement of research in MRAM technology.
Conclusion
Lien-Chang Wang's contributions to the field of magnetoresistive random access memory have established him as a key figure in memory technology innovation. His patents reflect a commitment to improving the efficiency and functionality of memory devices.