The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2008
Filed:
Jan. 25, 2006
Chien-chung Hung, Hsinchu, TW;
Ming-jer Kao, Hsinchu, TW;
Yuan-jen Lee, Hsinchu, TW;
Lien-chang Wang, Hsinchu, TW;
Chien-Chung Hung, Hsinchu, TW;
Ming-Jer Kao, Hsinchu, TW;
Yuan-Jen Lee, Hsinchu, TW;
Lien-Chang Wang, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.