The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2008
Filed:
Feb. 16, 2007
Applicants:
Chien-chung Hung, Hsinchu, TW;
Yuan-jen Lee, Hsinchu, TW;
Ming-jer Kao, Hsinchu, TW;
Inventors:
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.