The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2009
Filed:
Nov. 27, 2007
Chien-chung Hung, Taipei, TW;
Ming-jer Kao, Hsinchu County, TW;
Ding-yeong Wang, Hsinchu County, TW;
Yuan-jen Lee, Taipei County, TW;
Chien-Chung Hung, Taipei, TW;
Ming-Jer Kao, Hsinchu County, TW;
Ding-Yeong Wang, Hsinchu County, TW;
Yuan-Jen Lee, Taipei County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit.