The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2009
Filed:
Aug. 18, 2006
Chien-chung Hung, Taipei, TW;
Yung-hsiang Chen, Hsinchu County, TW;
Ming-jer Kao, Tainan, TW;
Yuan-jen Lee, Taipei County, TW;
Yung-hung Wang, Taoyuan County, TW;
Chien-Chung Hung, Taipei, TW;
Yung-Hsiang Chen, Hsinchu County, TW;
Ming-Jer Kao, Tainan, TW;
Yuan-Jen Lee, Taipei County, TW;
Yung-Hung Wang, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.