The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Oct. 17, 2006
Chien-chung Hung, Hsinchu, TW;
Ming-jer Kao, Hsinchu, TW;
Yuan-jen Lee, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.