Tianjin, China

Yu-Ren Peng

This inventor holds 9 USPTO granted patents and 17 published patent applications. Top assignees: Tianjin Sanan Optoelectronics Co., Ltd., Quanzhou Sanan Semiconductor Technology Co., Ltd., Tianjin Sanan Optoelectronics Co., Ltd.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Ren Peng. Retrieved from https://idiyas.com/inventor/yu-ren-peng-t29xszea

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9 

% Patents Active = 66.7

Average Co-Inventor Count = 5.6

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2024-2026

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9 patents (USPTO):Explore Patents

Title: Innovations of Yu-Ren Peng in Light Emitting Devices

Introduction

Yu-Ren Peng is a notable inventor based in Tianjin, China. He has made significant contributions to the field of optoelectronics, particularly in the development of light-emitting devices. With a total of 9 patents to his name, his work has advanced the technology used in various lighting applications.

Latest Patents

One of Yu-Ren Peng's latest patents is titled "Light emitting device and method for producing the same." This invention describes a light-emitting device that includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The device features a current spreading layer with a recess, an insulation layer filling the recess, and a contact layer on the surface of the current spreading layer. The design ensures that the sum of the depth of the recess and the thickness of the contact layer is not less than the thickness of the insulation layer.

Another significant patent is for a "Flip-chip light-emitting diode comprising multiple transparent dielectric layers and distributed Bragg reflector (DBR) structure." This invention includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer, all sequentially stacked. The first transparent dielectric layer has a thickness greater than λ/2n, while the second has a thickness of mλ/4n, where m is an odd number. This innovative structure enhances the efficiency of light emission.

Career Highlights

Yu-Ren Peng is currently employed at Tianjin Sanan Optoelectronics Co., Ltd. His work at this company has allowed him to focus on cutting-edge research and development in the field of optoelectronics. His inventions have not only contributed to the company's portfolio but have also had a broader impact on the industry.

Collaborations

Yu-Ren Peng has collaborated with several talented individuals in his field, including Duxiang Wang and Weiping Xiong. These collaborations have fostered innovation and have led to the successful development of advanced technologies in light-emitting devices.

Conclusion

In summary, Yu-Ren Peng is a prominent inventor whose work in light-emitting devices has made a significant impact on the optoelectronics industry. His innovative patents and collaborations highlight his dedication to advancing technology in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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