The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Sep. 07, 2022
Applicant:

Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;

Inventors:

Yuehua Jia, Tianjin, CN;

Weifan Ke, Tianjin, CN;

Huanshao Kuo, Tianjin, CN;

Yu-Ren Peng, Tianjin, CN;

Duxiang Wang, Tianjin, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H10H 20/852 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/857 (2025.01); H10H 20/852 (2025.01);
Abstract

A light-emitting device includes a first type semiconductor layer, an active layer, a second type semiconductor layer disposed adjacent to the active layer and opposite the first type semiconductor layer, and including a current spreading layer that has a recess, an insulation layer filling the recess and protruding from a surface of the current spreading layer that faces in a direction away from the active layer, and a contact layer disposed on the surface of the current spreading layer which lacks said insulation layer. A sum of a depth of the recess and a thickness of the contact layer is not less than a thickness of the insulation layer. A method for producing the light-emitting device is also disclosed.


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