The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Jul. 06, 2023
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
Jinghua Chen, Xiamen, CN;
Yenchin Wang, Xiamen, CN;
Chong Xu, Xiamen, CN;
Shasha Chen, Tianjin, CN;
Kunte Lin, Tianjin, CN;
Kaiqing Xu, Fujian, CN;
Shihchieh Hou, Tianjin, CN;
Shao-Hua Huang, Fujian, CN;
Huanshao Kuo, Fujian, CN;
Yu-Ren Peng, Tianjin, CN;
TIANJIN SANAN OPTOELECTRONICS CO., LTD., Tianjin, CN;
Abstract
A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.