The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jun. 22, 2023
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
Taotao Yin, Tianjin, CN;
Jin Wang, Tianjin, CN;
Huanshao Kuo, Tianjin, CN;
Yu-Ren Peng, Tianjin, CN;
Duxiang Wang, Tianjin, CN;
TIANJIN SANAN OPTOELECTRONICS CO., LTD., Tianjin, CN;
Abstract
A light-emitting diode includes a semiconductor epitaxy stack, a reflection layer, a first pad electrode, and a second pad electrode. The semiconductor epitaxy stack has a first surface and a second surface opposite to the first surface. The first surface has an electrode region and a light exit region. The semiconductor epitaxy stack includes a first type semiconductor layer, an active layer and a second type semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The reflection layer is disposed on the second surface opposite to the first surface. The first pad electrode is disposed on the electrode region and is electrically connected to the first type semiconductor layer. The second pad electrode is disposed on the electrode region and is electrically connected to the second type semiconductor layer.