The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Aug. 17, 2022
Applicant:
Quanzhou Sanan Semiconductor Technology Co., Ltd., Fujian, CN;
Inventors:
Wenhao Gao, Fujian, CN;
Yanbin Feng, Fujian, CN;
Qian Liang, Fujian, CN;
Chaoyu Wu, Fujian, CN;
Yu-Ren Peng, Tianjin, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/815 (2025.01); H10H 20/01 (2025.01); H10H 20/824 (2025.01);
U.S. Cl.
CPC ...
H10H 20/815 (2025.01); H10H 20/013 (2025.01); H10H 20/824 (2025.01);
Abstract
A light-emitting epitaxial structure includes an n-type ohmic contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, a p-type GaInP transition layer, a p-type AlGaInP transition unit and a p-type GaP ohmic contact layer that are sequentially disposed in such order, wherein in the p-type AlGaInP transition unit, 0<x≤0.7. An infrared light-emitting diode including the aforementioned light-emitting epitaxial structure and a method for manufacturing the light-emitting epitaxial structure are also disclosed.