This inventor holds 3 USPTO granted patents and 4 published patent applications. Top assignees: Quanzhou Sanan Semiconductor Technology Co., Ltd., Quanzhou Sanan Semiconductor Technology Co., Ltd.. Active years: 2025-2026.
Company Filing History:
2 out of 12 
1 out of 37 Years Active: 2025-2026
Title: Yanbin Feng - Innovator in Light-Emitting Technology
Introduction
Yanbin Feng is a prominent inventor based in Fujian, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. His innovative work has led to the creation of a patented light-emitting epitaxial structure that enhances the performance of infrared light-emitting diodes.
Latest Patents
Yanbin Feng holds a patent for a light-emitting epitaxial structure, which includes an n-type ohmic contact layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, a p-type GaInP transition layer, a p-type AlGaInP transition unit, and a p-type GaP ohmic contact layer. This structure is designed to improve the efficiency of infrared light-emitting diodes. The patent also details a method for manufacturing this light-emitting epitaxial structure.
Career Highlights
Yanbin Feng is currently employed at Quanzhou Sanan Semiconductor Technology Co., Ltd. His work at this company has positioned him as a key player in the semiconductor industry. He has been instrumental in advancing technologies that are critical for modern electronic devices.
Collaborations
Yanbin Feng collaborates with talented individuals such as Wenhao Gao and Qian Liang. Their combined expertise contributes to the innovative projects at Quanzhou Sanan Semiconductor Technology Co., Ltd.
Conclusion
Yanbin Feng's contributions to light-emitting technology exemplify the spirit of innovation in the semiconductor field. His patented inventions and collaborative efforts continue to drive advancements in this critical area of technology.