The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 15, 2024

Filed:

Mar. 16, 2022
Applicant:

Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;

Inventors:

Chihhung Hsiao, Tianjin, CN;

Yu-Ren Peng, Tianjin, CN;

Kunhuang Cai, Tianjin, CN;

Duxiang Wang, Tianjin, CN;

Chia-Hung Chang, Fujian, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/0093 (2020.05);
Abstract

A multi-junction light-emitting diode (LED) includes a first epitaxial structure, a second epitaxial structure and a tunnel junction structure disposed therebetween. The tunnel junction structure includes a InAlGaAs highly doped p-type semiconductor layer wherein z ranges from 0 to 0.05, a AlGaAs first composition graded layer wherein X2 is greater than 0 and less than X1, a GaInP highly doped n-type semiconductor layer and a AlGaAs second composition graded layer that are sequentially disposed on the first epitaxial structure in such order. A method for making the abovementioned multi-junction LED is also disclosed.


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