logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12211957 B1

PDFFull Text
Date of Patent:
Jan. 28, 2025

Filed:

Jan. 07, 2022

Flip-chip light-emitting diode comprising multiple transparent dielectric layers and distributed bragg reflector (dbr) structure

Applicant:

Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;

Inventors:

Weiping Xiong, Tianjin, CN;

Xin Wang, Tianjin, CN;

Zhiwei Wu, Tianjin, CN;

Di Gao, Tianjin, CN;

Yu-Ren Peng, Tianjin, CN;

Huan-shao Kuo, Tianjin, CN;

Assignee:

Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;

Attorneys:

DLA PIPER LLP (US)

Blake W. Jackson

Primary Examiner:

Didarul A Mazumder

Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/42 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/42 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01);
Abstract

A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than λ/2n, and the second transparent dielectric layer has a thickness of mλ/4n, wherein m is an odd number, λ is an emission wavelength of the light-emitting layer, nis a refractive index of the first transparent dielectric layer, and nis a refractive index of the second transparent dielectric layer and is greater than n.

Find Patent Forward Citations

Xiong, Weiping. (2025). Flip-chip light-emitting diode comprising multiple transparent dielectric layers and distributed bragg reflector (dbr) structure (U.S. Patent No. 12211957). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12211957

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…