Kawasaki, Japan

Yoshiyuki Nakao

This inventor holds 19 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: Fujitsu Corporation, Fujitsu Semiconductor Limited, Fujitsu Microelectronics Limited. Active years: 1997-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiyuki Nakao. Retrieved from https://idiyas.com/inventor/yoshiyuki-nakao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 52.6

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 128(Granted Patents)


Location History:

  • Yokohama, JP (2014)
  • Kawasaki, JP (1997 - 2017)

Company Filing History:


Years Active: 1997-2017

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Damascene Method
Multilayer Interconnection
Metal Nitride
Copper Film Resistance
Barrier Layer
Resist Pattern
Conductor
Wiring Formation
19 patents (USPTO):Explore Patents

Title: Innovations of Yoshiyuki Nakao in Semiconductor Technology

Introduction

Yoshiyuki Nakao is a prominent inventor based in Kawasaki, Japan, known for his extensive contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, Nakao has developed innovative solutions that enhance semiconductor devices and manufacturing methods.

Latest Patents

Among his latest patents is a groundbreaking semiconductor device that incorporates a semiconductor substrate, an oxygen-containing insulating film, and a series of films designed for enhanced functionality. The innovative structure includes a copper-containing first film and a second film, with a manganese-containing oxide layer strategically positioned for optimal performance. This device integrates a copper interconnection formed through an electroplating method, followed by a brief heat treatment at a temperature between 80°C and 120°C.

Another significant patent details a manufacturing method for semiconductor devices and an etching apparatus. This apparatus comprises a process unit and a control unit, which utilize an OES detector to measure plasma emission intensity. By employing nonlinear regression analysis to generate a precise regression formula, Nakao's invention can determine the etching end point with high accuracy, thus improving the efficiency and effectiveness of the etching process.

Career Highlights

Yoshiyuki Nakao's professional journey includes significant roles at notable companies such as Fujitsu Corporation and Fujitsu Semiconductor Limited. His work in these organizations has played a crucial role in shaping advancements within the semiconductor industry.

Collaborations

Throughout his career, Nakao has worked alongside esteemed colleagues, including Noriyoshi Shimizu and Nobuyuki Ohtsuka. These collaborations have enabled valuable exchanges of ideas and innovations, further pushing the boundaries of semiconductor research and development.

Conclusion

Yoshiyuki Nakao's contributions to semiconductor technology exemplify the spirit of innovation and dedication to enhancing manufacturing processes and device performances. His patented inventions not only reflect his expertise but also pave the way for future advancements in the industry. With continued research and collaboration, Nakao remains a key figure in the evolution of semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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