The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
Sep. 26, 2008
Noriyoshi Shimizu, Kawasaki, JP;
Yoshiyuki Nakao, Kawasaki, JP;
Hiroki Kondo, Nagoya, JP;
Takashi Suzuki, Kawasaki, JP;
Nobuyuki Nishikawa, Kawasaki, JP;
Noriyoshi Shimizu, Kawasaki, JP;
Yoshiyuki Nakao, Kawasaki, JP;
Hiroki Kondo, Nagoya, JP;
Takashi Suzuki, Kawasaki, JP;
Nobuyuki Nishikawa, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile