The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Jan. 18, 2007
Nobuyuki Ohtsuka, Kawasaki, JP;
Noriyoshi Shimizu, Kawasaki, JP;
Yoshiyuki Nakao, Kawasaki, JP;
Hisaya Sakai, Kawasaki, JP;
Nobuyuki Ohtsuka, Kawasaki, JP;
Noriyoshi Shimizu, Kawasaki, JP;
Yoshiyuki Nakao, Kawasaki, JP;
Hisaya Sakai, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method for fabricating a semiconductor device includes the steps of forming an opening defined by an inner wall surface in an insulation film, forming a Cu—Mn alloy layer in the opening, depositing a Cu layer on the Cu—Mn alloy layer and filling the opening with the Cu layer, and forming a barrier layer as a result of reaction between Mn atoms in the Cu—Mn alloy layer and the insulation film, wherein the step of forming the barrier layer is conducted by exposing the Cu layer to an ambient that forms a gaseous reaction product when reacted with Mn.