The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Nov. 10, 2008
Masaki Haneda, Kawasaki, JP;
Michie Sunayama, Kawasaki, JP;
Noriyoshi Shimizu, Kawasaki, JP;
Nobuyuki Ohtsuka, Kawasaki, JP;
Yoshiyuki Nakao, Kawasaki, JP;
Takahiro Tabira, Kawasaki, JP;
Masaki Haneda, Kawasaki, JP;
Michie Sunayama, Kawasaki, JP;
Noriyoshi Shimizu, Kawasaki, JP;
Nobuyuki Ohtsuka, Kawasaki, JP;
Yoshiyuki Nakao, Kawasaki, JP;
Takahiro Tabira, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device includes a semiconductor substrate, an oxygen-containing insulating film disposed above the above-described semiconductor substrate, a concave portion disposed in the above-described insulating film, a copper-containing first film disposed on an inner wall of the above-described concave portion, a copper-containing second film disposed above the above-described first film and filled in the above-described concave portion, and a manganese-containing oxide layer disposed between the above-described first film and the above-described second film. Furthermore, a copper interconnection is formed on the above-described structure by an electroplating method and, subsequently, a short-time heat treatment is conducted at a temperature of 80° C. to 120° C.