Osaka, Japan

Yoshito Ikeda

This inventor holds 22 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Matsushita Electric Industrial Co., Ltd., Panasonic Corporation, Matsushita Electronics Corporation. Active years: 1992-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshito Ikeda. Retrieved from https://idiyas.com/inventor/yoshito-ikeda-7pg6otl1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 77.3

Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 162(Granted Patents)


Location History:

  • Kadoma, JP (1992)
  • Ibaraki, JP (2003 - 2007)
  • Osaka, JP (1999 - 2010)

Company Filing History:


Years Active: 1992-2010

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Areas of Expertise:
Semiconductor Device
Gallium Nitride
Infrared Sensor
III-V Nitride
Field Effect Transistor
Heterojunction
Schottky Contact
Ammonia Plasma
Annealing
Active Region
RF Semiconductor
22 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Yoshito Ikeda in Semiconductor Technology

Introduction

Yoshito Ikeda, based in Osaka, Japan, is a prominent inventor with a remarkable portfolio of 22 patents. His work primarily focuses on semiconductor technology, which has significant implications for various electronic applications.

Latest Patents

Among his latest patents, one notable invention is related to a semiconductor device and its fabrication method. This patent describes a semiconductor device featuring a Group III nitride semiconductor layer with a gate electrode formed upon it. The unique aspect of the gate electrode is the inclusion of an adhesion-enhancing element, along with a thermally oxidized insulating film placed between the Group III nitride semiconductor layer and the gate electrode.

Another recent patent details the method of fabricating a semiconductor device, where an active region made from Group III nitride semiconductor is developed on a substrate. The innovation includes forming an insulating oxide film around the active region through the oxidation of the Group III nitride semiconductor. Additionally, the design involves a gate electrode in Schottky contact with the active region, extending over the insulating oxide film, and includes ohmic electrodes acting as source and drain electrodes positioned strategically along the gate's length.

Career Highlights

Yoshito Ikeda has had an impressive career, having worked for renowned companies such as Matsushita Electric Industrial Co., Ltd. and Panasonic Corporation. His contributions in these organizations have played a crucial role in advancing semiconductor technologies.

Collaborations

Ikeda has collaborated with other esteemed professionals in the field, including Kaoru Inoue and Katsunori Nishii. These collaborations underscore the importance of teamwork and shared expertise in driving innovation within semiconductor research and development.

Conclusion

Yoshito Ikeda's impressive patent portfolio and meaningful contributions to semiconductor technology represent a significant advancement in the field. His innovative approaches to device fabrication and design continue to influence the electronics industry, paving the way for future technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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