The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2004
Filed:
Dec. 27, 2002
Applicant:
Inventors:
Katsunori Nishii, Osaka, JP;
Yoshito Ikeda, Osaka, JP;
Hiroyuki Masato, Osaka, JP;
Kaoru Inoue, Shiga, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ; H01L 2/7095 ; H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 3/10328 ; H01L 2/7095 ; H01L 2/348 ;
Abstract
The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.