This inventor holds 25 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Matsushita Electric Industrial Co., Ltd., Matsushita Electronics Corporation, Panasonic Corporation. Active years: 1994-2009.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Hirakata, JP (1994 - 2006)
- Osaka, JP (1996 - 2009)
Company Filing History:
22 out of 27,375 
3 out of 655 
1 out of 16,454 
Years Active: 1994-2009
Areas of Expertise:
Title: The Innovative Contributions of Katsunori Nishii
Introduction: Katsunori Nishii, based in Osaka, Japan, has made significant contributions to the field of semiconductor technology, holding 25 patents to his name. His work emphasizes advancements in semiconductor fabrication methods, showcasing his innovative spirit and dedication to pushing the boundaries of technology.
Latest Patents: Among his latest patents is a method of fabricating a semiconductor device that features an active region formed from a group III nitride semiconductor. This invention includes an insulating oxide film, which is created in the peripheral portion of the active region through the oxidation of the nitride semiconductor. A notable aspect of this patent is the inclusion of a gate electrode that is in Schottky contact with the active region, extending onto the insulating oxide film.
Another significant patent focuses on reducing surface potential in semiconductor devices. This method uses an active region composed of a group III-V nitride semiconductor, with ohmic and gate electrodes formed on it. By exposing the entire surface of the active region to plasma, this technique achieves a lower surface potential for electrons compared to traditional methods.
Career Highlights: Katsunori Nishii has worked with prestigious organizations, including Matsushita Electric Industrial Co., Ltd. and Matsushita Electronics Corporation. His tenure in these companies has allowed him to refine his skills and contribute to innovative solutions in semiconductor technology.
Collaborations: Throughout his career, Nishii has collaborated with esteemed colleagues such as Kaoru Inoue and Yoshito Ikeda. These collaborations have fostered an environment of creativity and innovation, leading to the advancement of various semiconductor fabrication methods.
Conclusion: Katsunori Nishii's impact on the semiconductor industry is profound, with his impressive portfolio of patents reflecting his innovative mindset. His contributions, characterized by groundbreaking methods of fabrication, continue to influence the development of semiconductor technology, establishing him as a notable figure in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile