The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2004
Filed:
Feb. 25, 2003
Applicant:
Inventors:
Kaoru Inoue, Shiga, JP;
Yoshito Ikeda, Osaka, JP;
Yutaka Hirose, Kyoto, JP;
Katsunori Nishii, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ; H01L 3/1072 ; H01L 3/1109 ;
U.S. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ; H01L 3/1072 ; H01L 3/1109 ;
Abstract
A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
Inoue, Kaoru. (2004). Semiconductor device composed of a group iii-v nitride semiconductor (U.S. Patent No. 6737683). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6737683
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile