The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Sep. 18, 2007
Katsunori Nishii, Osaka, JP;
Kaoru Inoue, Shiga, JP;
Toshinobu Matsuno, Kyoto, JP;
Yoshito Ikeda, Osaka, JP;
Hiroyuki Masato, Osaka, JP;
Katsunori Nishii, Osaka, JP;
Kaoru Inoue, Shiga, JP;
Toshinobu Matsuno, Kyoto, JP;
Yoshito Ikeda, Osaka, JP;
Hiroyuki Masato, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.