The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Jun. 09, 2003
Applicants:
Katsunori Nishii, Osaka, JP;
Kaoru Inoue, Shiga, JP;
Toshinobu Matsuno, Kyoto, JP;
Yoshito Ikeda, Osaka, JP;
Hiroyuki Masato, Osaka, JP;
Inventors:
Katsunori Nishii, Osaka, JP;
Kaoru Inoue, Shiga, JP;
Toshinobu Matsuno, Kyoto, JP;
Yoshito Ikeda, Osaka, JP;
Hiroyuki Masato, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0336 (2006.01);
U.S. Cl.
CPC ...
Abstract
An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.