The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Jun. 03, 2003
Applicants:
Yoshito Ikeda, Ibaraki, JP;
Kaoru Inoue, Otsu, JP;
Yutaka Hirose, Nagaokakyo, JP;
Katsunori Nishii, Hirakata, JP;
Inventors:
Yoshito Ikeda, Ibaraki, JP;
Kaoru Inoue, Otsu, JP;
Yutaka Hirose, Nagaokakyo, JP;
Katsunori Nishii, Hirakata, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/095 (2006.01); H01L 29/47 (2006.01); H01L 29/812 (2006.01); H01L 31/0328 (2006.01); H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract
A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and a gate contact, respectively. The Schottky contact is a copper alloy, such as palladium copper, in which the content by weight of copper is 5%.