The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Jun. 20, 2006
Tomohiro Murata, Osaka, JP;
Yutaka Hirose, Kyoto, JP;
Yoshito Ikeda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Kaoru Inoue, Shiga, JP;
Daisuke Ueda, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Tomohiro Murata, Osaka, JP;
Yutaka Hirose, Kyoto, JP;
Yoshito Ikeda, Osaka, JP;
Tsuyoshi Tanaka, Osaka, JP;
Kaoru Inoue, Shiga, JP;
Daisuke Ueda, Osaka, JP;
Yasuhiro Uemoto, Shiga, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlGaN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlGaN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.