Tokyo, Japan

Yoshiki Nakashima

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 73(Granted Patents)


Location History:

  • Tokyo, JP (2013 - 2014)
  • Minato-ku, JP (2014 - 2015)

Company Filing History:


Years Active: 2013-2015

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9 patents (USPTO):Explore Patents

Title: Innovations of Yoshiki Nakashima

Introduction

Yoshiki Nakashima is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on enhancing the functionality and efficiency of semiconductor devices.

Latest Patents

Nakashima's latest patents include a functional element built-in substrate and a method for manufacturing semiconductor devices. The functional element built-in substrate aims to improve the connection between the electrode terminal of a functional element and the back surface of the wiring substrate. This innovation allows for miniaturization while maintaining effective electrical connections. The manufacturing method for semiconductor devices incorporates a semiconductor element into a multilayered wiring structure, which helps reduce warping and improve yield rates, ultimately leading to the production of thin-type semiconductor devices with high-density packaging properties.

Career Highlights

Yoshiki Nakashima is currently associated with NEC Corporation, where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise and innovative approach have positioned him as a key figure in advancing semiconductor manufacturing processes.

Collaborations

Nakashima has collaborated with notable colleagues such as Shintaro Yamamichi and Kentaro Mori. Their combined efforts contribute to the ongoing advancements in semiconductor technology.

Conclusion

Yoshiki Nakashima's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of high-density semiconductor devices.

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