The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2014

Filed:

May. 18, 2010
Applicants:

Kentaro Mori, Tokyo, JP;

Yoshiki Nakashima, Tokyo, JP;

Daisuke Ohshima, Tokyo, JP;

Katsumi Kikuchi, Tokyo, JP;

Shintaro Yamamichi, Tokyo, JP;

Inventors:

Kentaro Mori, Tokyo, JP;

Yoshiki Nakashima, Tokyo, JP;

Daisuke Ohshima, Tokyo, JP;

Katsumi Kikuchi, Tokyo, JP;

Shintaro Yamamichi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a core substrate, and at least one insulating layer and at least one wiring layer that are disposed on a first surface and a second, opposite surface of the substrate. The semiconductor device includes a via disposed in the insulating layer and in the core substrate, and which connects the wiring layers to one another. The semiconductor device includes a semiconductor element mounted on the first surface, forming an electrode terminal that faces up. The semiconductor device includes a connecting portion that penetrates the insulating layer and directly connects the electrode terminal of the semiconductor element and the wiring layer on the first surface. A minimum wiring pitch of this wiring that of any wiring layer on the second surface.


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