Takarazuka, Japan

Yoshihiro Ikeda

This inventor holds 18 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Renesas Technology Corp., Renesas Electronics Corporation. Active years: 2004-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihiro Ikeda. Retrieved from https://idiyas.com/inventor/yoshihiro-ikeda-ttl6rrcy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 61.1

Average Co-Inventor Count = 4.1

ph-index = 5

Forward Citations = 91(Granted Patents)


Location History:

  • Hamura, JP (2004 - 2006)
  • Tokyo, JP (2007)
  • Takarazuka, JP (2006 - 2010)
  • Takaraduka, JP (2006 - 2016)

Company Filing History:


Years Active: 2004-2016

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Areas of Expertise:
Semiconductor Device
Flash Memory Cells
Insulating Film
Memory Cell Size
Non-volatile Memory
Memory Leakage Current
Integrated Circuit
Manufacturing Method
Threshold Voltage
Dummy Conductive Film
Virtual Grounding
Capacitor Formation
18 patents (USPTO):Explore Patents

Certainly! Here is an article about inventor Yoshihiro Ikeda:

Title: Unveiling the Innovations of Yoshihiro Ikeda

Introduction:

Yoshihiro Ikeda, a prominent inventor hailing from Takaraduka, Japan, has made significant contributions to the field of semiconductor devices and manufacturing processes. With an impressive portfolio of 18 patents, his innovative approach to technological advancements has garnered widespread recognition in the industry.

Latest Patents:

Yoshihiro Ikeda's latest patents showcase his expertise in semiconductor device manufacturing. One of his groundbreaking inventions involves a method to manufacture a semiconductor device with a non-volatile memory cell. This method includes intricate steps such as forming insulating films, recessing them using conductive films as masks, and patterning the conductive and insulating films to optimize the device's performance.

Another notable patent by Ikeda focuses on enhancing the arrangement of floating gate electrodes and control gate electrodes in flash memory cells. By employing a unique convex shape for the floating gate electrodes, this innovation allows for a reduction in the size of the semiconductor device while improving the coupling ratio between the electrodes without compromising on performance.

Career Highlights:

Yoshihiro Ikeda has made significant strides in his career, having worked with renowned companies such as Renesas Technology Corp. and Renesas Electronics Corporation. His innovative spirit and expertise in semiconductor technology have been instrumental in driving advancements in the industry, making him a respected figure among his peers.

Collaborations:

Throughout his career, Yoshihiro Ikeda has collaborated with talented individuals such as Tatsuya Fukumura and Shunichi Narumi. These collaborations have not only enriched his own knowledge and expertise but have also led to the development of cutting-edge technologies that have shaped the semiconductor industry.

Conclusion:

In conclusion, Yoshihiro Ikeda's relentless pursuit of innovation and dedication to advancing semiconductor technology have established him as a trailblazer in the field. His patents reflect a deep understanding of complex manufacturing processes and a commitment to driving progress in the industry. As he continues to push the boundaries of technological innovation, Yoshihiro Ikeda remains a driving force behind the next generation of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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