The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Jul. 17, 2002
Keisuke Tsukamoto, Ome, JP;
Yoshihiro Ikeda, Hamura, JP;
Tsutomu Okazaki, Ome, JP;
Daisuke Okada, Kunitachi, JP;
Hiroshi Yanagita, Hamura, JP;
Keisuke Tsukamoto, Ome, JP;
Yoshihiro Ikeda, Hamura, JP;
Tsutomu Okazaki, Ome, JP;
Daisuke Okada, Kunitachi, JP;
Hiroshi Yanagita, Hamura, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with non-volatile memory cells formed thereon are extended a length D by utilizing the region which underlies a dummy conductive film, whereby a stress induced from an insulating film which surrounds the element forming regions is concentrated on the extended region. As a result, defects do not extend up to the regions where memory cells are formed and therefore it is possible to reduce leakage current in the memory cells.