The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Sep. 30, 2005
Takashi Kobayashi, Tokorozawa, JP;
Yoshitaka Sasago, Kokubunji, JP;
Tsuyoshi Arigane, Tachikawa, JP;
Yoshihiro Ikeda, Takarazuka, JP;
Kenji Kanamitsu, Hitachinaka, JP;
Takashi Kobayashi, Tokorozawa, JP;
Yoshitaka Sasago, Kokubunji, JP;
Tsuyoshi Arigane, Tachikawa, JP;
Yoshihiro Ikeda, Takarazuka, JP;
Kenji Kanamitsu, Hitachinaka, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
The object of the present invention is to provide a new nonvolatile semiconductor memory device and its manufacturing method for the purpose of miniaturizing a virtual grounding type memory cell based on a three-layer polysilicon gate, enhancing the performance, and boosting the yield. In a memory cell according to the present invention, a floating gate's two end faces perpendicular to a word line and channel are partly placed over the top of a third gate via a dielectric film. The present invention can reduce the memory cell area of a nonvolatile semiconductor memory device, increase the operating speed, and enhances the yield.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile