The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Nov. 19, 2014
Renesas Electronics Corporation, Kanagawa, JP;
Tatsuya Fukumura, Kawanishi, JP;
Yoshihiro Ikeda, Takaraduka, JP;
Shunichi Narumi, Itami, JP;
Izumi Takesue, Sagamihara, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A method of manufacturing a semiconductor device having a non-volatile memory cell includes forming first insulating films with first conductive films arranged therebetween, recessing the first insulating films using the first conductive films as a mask, so that heights of top surfaces of the first insulating films are lower than heights of top surfaces of the first conductive films, forming a second insulating film over the first conductive and insulating films, forming a second conductive film over the second insulating film, and patterning the first and second conductive films, and the second insulating film. A length of the floating gate in a second direction is larger than a maximum length of the floating gate in a first direction, and a length from a top surface of the second insulating film to a top surface of the floating gate is larger than a length of a space between a plurality the floating gates.