Shunichi Narumi

Title: Shunichi Narumi: Innovator in Semiconductor Technology

Introduction

Shunichi Narumi is a prominent inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing the characteristics of non-volatile memory devices, which are crucial for modern electronic applications.

Latest Patents

Narumi's latest patents include a FINFET non-volatile semiconductor memory device and a method for manufacturing this device. The innovation aims to improve the characteristics of semiconductor devices that utilize non-volatile memory. By incorporating a high dielectric constant film on an insulating film between the memory gate electrode and the fin, Narumi's design enhances the electric field distribution, leading to better disturbance characteristics. Additionally, his method of manufacturing a semiconductor device involves a series of precise steps to create a non-volatile memory cell, ensuring optimal performance and reliability.

Career Highlights

Throughout his career, Narumi has worked with notable companies in the semiconductor industry, including Renesas Electronics Corporation and Renesas Technology Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in semiconductor technology.

Collaborations

Some of Narumi's notable coworkers include Tatsuya Fukumura and Yoshihiro Ikeda. Their collaborative efforts have played a role in the development of cutting-edge semiconductor technologies.

Conclusion

Shunichi Narumi's contributions to semiconductor technology, particularly in non-volatile memory devices, highlight his role as a key innovator in the field. His patents and career achievements reflect a commitment to advancing technology for future applications.