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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10707223 B1

PDFFull Text
Date of Patent:
Jul. 07, 2020

Filed:

Nov. 21, 2017

Finfet non-volatile semiconductor memory device and method of manufacturing the finfet non-volatile semiconductor memory device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Shunichi Narumi, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Matthew C Landau

Assistant Examiner:

Mark Hatzilambrou

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 27/11568 (2017.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01); H01L 27/11565 (2017.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/02 (2013.01); H01L 21/02172 (2013.01); H01L 21/02266 (2013.01); H01L 27/11565 (2013.01); H01L 29/40117 (2019.08); H01L 29/42344 (2013.01); H01L 29/42348 (2013.01); H01L 29/66833 (2013.01); H01L 29/7855 (2013.01); H01L 29/792 (2013.01); H01L 29/408 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract

Characteristics of a semiconductor device having a nonvolatile memory are improved. A high dielectric constant film is provided on an insulating film between a memory gate electrode and a fin as components of a nonvolatile memory. The high dielectric constant film is provided over the top of the fin and the top of an element isolation region, but is not provided over a side surface of the fin. In this way, since the high dielectric constant film is provided over the top of the fin and the top of the element isolation region, it is possible to relax an electric field in the vicinity of each of the upper and lower corner portions of the fin, leading to an improvement in disturbance characteristics.

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