The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Oct. 15, 2003
Tomoyuki Ishii, Kodaira, JP;
Kazunori Furusawa, Musashino, JP;
Hideaki Kurata, Kokubunji, JP;
Yoshihiro Ikeda, Takarazuka, JP;
Tomoyuki Ishii, Kodaira, JP;
Kazunori Furusawa, Musashino, JP;
Hideaki Kurata, Kokubunji, JP;
Yoshihiro Ikeda, Takarazuka, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
To realize a semiconductor memory device with reduced cell-to-cell variation in writing characteristics a semiconductor memory has a source region and a drain region, which are formed parallel to each other, and an assist electrode which is between and parallel to the source and drain regions without overlapping, so that at the time of writing, the assist electrode is used as an assist electrode for hot electrons to be injected at the source side and at the time of reading, an inversion layer formed under the assist electrode is used as the source region or the drain region.